The next generation memory technologies market has show substantial growth in recent times owing to the growing demand for faster, efficient and cost effective memory solutions. The necessity for memory solutions that can serve applications in various areas effectively is rising. The aim of this report is to provide an insight on the global next generation memory technologies markets current and projected trends and to carry out an in depth analysis of market potentials available. The report analyzes opportunities in the developed and emerging economies so that companies can make strategic decisions and gain competitive edge. The global next generation memory technologies market is expected to grow at a promising CAGR. This growth forecast has resulted in many development and innovation activities in memory solutions market.
The drivers for next generation memory technologies market are its qualities such as power efficiency, high endurance and faster switching time. Whereas, certain factors which can act as restrains are its design cost and presence of intense competition in the market. The next generation memory applications in various areas such as computers, industrial applications, storage electronics, aerospace and defense, consumer electronics, automotives and others are the varied fields of opportunities for this market.
Next Generation Memory Technologies Market by Application
The various application sectors for next generation memory technologies are mobile phones, mass storage, industrial applications, consumer electronics, aerospace and defense, automotive electronics, smart cards and others. These next generation memories facilitate faster, efficient and cost effective storage solutions. Mass storage is expected to be the most prominent market segment for next generation memory technologies. This assumption can be drawn from the fact that tremendous amount of data is generated on daily basis throughout the globe thus raising the need for more effective storage solutions with larger storage capacity.
Next Generation Memory Technologies Market by Product Type
The next generation memory technologies market by product type is segmented into volatile and non-volatile memories. Non-volatile memories are been further sub segmented into Resistive random access memory (Re RAM), Phase change memory (PCM), Magneto-resistive random access memory (MRAM), Ferroelectric RAM (FeRAM) and others. Crossbar Inc. has developed a simple and easy to manufacture RRAM that can scale up to 1 terabyte (TB) and is small in size as a postal stamp. Volatile memories can be further categorized into Dynamic random access (DRAM), Static random access memory (SRAM) and others. Volatile memory is favored more offer over volatile memory due to the advantages they offer such as they are rewritable, store data even after power is turned off and others.
Next Generation Memory Technologies Market by Geography
Geography wise, the next generation memory technologies market is segmented into Europe, Asia-Pacific, North America and LAMEA (Latin America, Middle East and Africa). Growth in Asia-Pacific region is due to the huge demand from Japan, China and South Korea. The rise of smart phone users in these regions is the reason for this huge demand.
Competitive Landscape
Some of the major players engaged in production of next generation memory technologies are Samsung electronics, Crossbar Inc., Fujitsu Ltd, Micron technology, Inc., SK Hynix, Inc., Future electronics and others. These companies continuously enhance their R&D sections to cope up with new technology advents taking place. Micron technology, a leading provider of advanced memory and storage solutions has announced production of DDR4 memory to support the upcoming Intel CPU’s.
HIGH LEVEL ANALYSIS
The analysis gives an overview about global next generation memory technologies market and its key concerns. The global market analysis using Porter’s five force model and SWOT helps in giving a better understanding about various opportunities, threats and substitutes. A detailed analysis of market data and trends for mentioned geographic locations has been provided. The drastic and fast technology changes taking place and intense competition are the key concerns for global next generation memory market. The bargaining power of suppliers is low as they are less concentrated which indicates that there are abundant supplier present providing memory solutions. Thus, this increases the bargaining power of the buyer as they have a wide range of service providers to choose from. Threat of new entrants to this market is high due to rapidly changing technologies and less government regulations. Rapidly changing technology also raises the threat of substitution as some new innovation may replace the old storage methods. The intensity of rivalry is high due to the presence of abundant suppliers in market catering their service to customers with low product differentiation.
KEY BENEFITS
- This report gives an insight on the next generation memory technologies and its applications
- Detailed analysis of drivers and constraints of next generation memory technologies market has been discussed
- Porter’s five force and SWOT analysis would facilitate decision makers in making strategic decisions by providing them insight on current market conditions and important factors
- Analysis of key market players and their strategies are discussed in the report in order to understand the competition in better way
- Market segmentation is been conducted based on application, product type and geographic locations, which would assist companies in deciding on the segments of importance
- Analysis of current market scenario, as well as the future estimations would assist the decision makers understand the future prospects of the market
Next Generation Memory Technologies Market Report Highlights
| Aspects | Details |
 By Application |
|
 By Product Type |
|
 By Geography |
|
 Key Market Players | Intel, Netlist, Micron Technology, Smart Storage Systems, Toshiba, Crossbar, SK hynix, SanDisk, Samsung, Western Digital |
Loading Table Of Content...
